A university materials and optoelectronic laboratory applied the 1200℃ Intelligent PECVD System for the growth of graphene, diamond-like carbon (DLC), semiconductor insulating films and photovoltaic functional layers. Integrated with 13.56MHz RF plasma and high-precision temperature control, the system enables high-quality film growth at 400–600℃ and supports heat treatment up to 1200℃ for versatile material research.

In actual use, the dual-zone PID control reaches ±1℃ accuracy. With 4–8-channel MFC gas control, it precisely manages SiH₄, CH₄, NH₃ and other gases. The vacuum system provides ultimate pressure ≤5×10⁻³Pa and supports atmospheric/low-pressure modes. Plasma assistance lowers deposition temperature and improves film density and adhesion.

The PLC-based full-auto control and complete safety protection ensure stable long-term running. It has become a core platform for 2D materials, photovoltaic films and semiconductor coating research.

Core Operating Parameters