Chemical Vapor Deposition (CVD) System

Chemical Vapor Deposition (CVD) systems are easy-to-use systems for uniformly depositing thin films of materials, including semiconductors, silicon carbide (SiC), oxides, carbides, and nitrides, onto metal substrates. The resulting films exhibit excellent uniformity and good step coverage. CVD systems are also used to synthesize nanomaterials, such as carbon nanotubes, graphene, and semiconductor nanowires.

The chemical vapor deposition (CVD) system consists of a CVD furnace with a long, uniform heating zone, a gas mixing module controlled by a mass flow meter, and a vacuum module. System connectors are sealed with stainless steel flanges and high-temperature O-ring seals. The furnace is easily movable on sliding rails, facilitating rapid cooling. The gas module can mix up to three gas sources monitored by a mass flow meter. A two-stage rotary/molecular vacuum pump ensures high system vacuum.

Metals, semiconductors, and dielectric materials are crucial electronic device components (such as high-efficiency solar panels, memory systems, computer chips, and various high-performance tools) and are often manufactured through chemical vapor deposition. Chemical precursors play a crucial role in device manufacturing, and Chemat offers a wide range of high-purity CVD precursors for these applications. These precursors are packaged in stainless steel bulbs for easy connection to chemical vapor deposition systems. Available precursors include metal alkoxides, alkylamides, and acetylated ketones for metal oxides, nitrides, and metals.

Chemical Vapor Deposition (CVD) System Specifications

Furnace part

Maximum temperature: 1200℃

Heating area: 270mm

Uniform heating area: 100mm

Quartz tube diameter: 40/60/80/100mm optional

Quartz tube length: 1000mm

Slide rail length: 820mm

Gas mixing module

Gas source: 3

Gas source control: mass flow meter

Range: 0-1 SLM

Vacuum module

Vacuum: Rotary/molecular 2-stage pump

Maximum vacuum: 6x10^-3 Pa

Vacuum display: digital